根据体光伏效应和压电性的叠加，可以解释光致伸缩现象。
Photostriction can be explained by superposition of the bulk photostrictive effect and piezoelectricity.
同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
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