MOSFET的输入二极管是由一个电场控制在门区,因此总是输入阻抗非常高,因为没有正向偏置二极管,以降低输入阻抗。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
不同偏置电压的输入缓冲晶体管。
通过施加规定的反向偏流,然后测量二极管两端的电压,即可测得反向偏置电流。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
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