位错密度定义为单位体积晶体中所含的位错线的总长度，单位是1/平方厘米。位错密度的另一个定义是：穿过单位截面积的位错线数目，单位也是1/平方厘米。
钽的加工硬化速率及其显微组织 - TNMSC 关键字: 钽； 加工硬化； 位错密度[gap=1070]Key words: tantalum; work hardening; dislocation density
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随 后将产生大量的位错，这些位错会相互作用并且渗透外延层，导致螺位错密度 (threading dislocation density)特别大的（一般会超过 2 9 10 cm ）。
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With the depth increasing, domain size increased and microstrain/dislocation density decreased, respectively. During annealing, the peening microstructures were recovered and recrystallized.
随层深的增加,晶块尺寸逐渐增大,显微畸变和位错密度逐渐降低。
参考来源 - TiBThetransmittance of KDP crystals taken from different parts of samples was tested. Theresult showed that there was no direct correlation between dislocation density andKDP crystal transmittance.
对取自不同位错密度区域的晶体样品进行了透过率测试，发现位错密度的高低对KDP晶体的透过率影响不大。
参考来源 - pH值对KDP晶体生长的影响·2,447,543篇论文数据，部分数据来源于NoteExpress
同时，位错密度下降并结成位错网络。
Meanwhile, dislocation reduced in density and joined into network.
贝氏体中位错密度较低，不利于合金碳化物的聚集粗化。
The lower dislocation density in bainite is unfavourable for the aggregation and coarsening of carbides.
透射电子显微镜的观测表明在ELO范围内位错密度很低。
EM observations indicate that the dislocation density is very low in the ELO reg ion.
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