... secondary damage 连带损坏，二次损坏，继发损坏 secondary defect 二次缺陷 secondary discharge 次级放电 ...
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本文也可简单地讨论二次缺陷的生长和缩小的机理问题。
The mechanism of growing and shrinking of secondary defects is discussed briefly.
研究证实，二次缺陷形成的初始温度，可近似代表辐照绿柱石的最佳热固色温度点。
The research also indicates that the temperature resulting from the secondary defects may represent approximately the optimum temperature for the thermal color concentration.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
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