Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.

用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。

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At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.

目前射频芯片和高速光纤通信芯片绝大多数都是采用高速双极性硅工艺和砷化镓工艺。

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