侧板后掠角大小和整流罩位置变化时，对进气道的质量捕获、总压恢复系数和隔离段出口流场的均匀性等都有一定的影响。
Changes of sidewall sweep Angle and cowl position can influence inlet performance such as mass capture, total pressure recovery coefficient and uniformity of isolator exit flow field.
整流罩位置为25%的三维侧压进气道可以获得较高质量捕获和总压恢复系数，且隔离段出口流场比较均匀。
And three-dimensional sidewall compression inlet with 25 percent cowl position has high mass capture and total pressure recovery coefficient and isolator exit flow flied is homogeneous.
同时对多孔硅的整流特性、场发射性质以及多孔硅衬底对薄膜发光材料发光性能的影响进行了研究。
Rectification character, field emission character of porous silicon and effect of porous silicon on luminescence character of film luminescence material are studied, too.
应用推荐