Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.

High quality cubic boron nitride (c BN) films were synthesized in lab built magnetically enhanced active reaction evaporation system with pulsed DC bias.

It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.