• 1. static induction: 静电感应
• 2. static induction transistor: 静电感应晶体管
• 3. Static Induction Thyristor: 静电感应晶闸管

更多释义

• 1.The gate source breakdown performance of static induction transistor was studied experimentally.
  对静电感应器件的栅源击穿特性做了实验研究。
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• 2.Methods for improving the high current performance of static induction transistor (SIT) are presented.
  描述了改善静电感应晶体管（SIT）大电流特性的新方法。
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• 3.In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
  为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
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