• 1. gate threshold voltage: 电压 | 栅极阈值电压
• 2. Gate-emitter threshold voltage: 发射极间的阈值电压

• 1.The body region was doped high to increase the back gate threshold voltage.
  增加体区掺杂，以提高背栅阈值电压；
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• 2.The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
  如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
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• 3.The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
  推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
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