• 1. floating gate transistor: 浮栅金属氧化物半导体晶体管 | 晶体管
• 2. floating g gate transistor: 浮栅金属氧化物半导体晶体管

• 1.The floating gate can only be accessed though another transistor, the control gate.
  浮动门虽然只能进入另一个晶体管，控制闸门。
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• 2.The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
  如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
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• 3.Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
  碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
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