退火对离子注入后的非连续多层膜gmr效应的影响比未注入离子的非连续多层膜gmr效应的影响显著。
The effect of anneal on the GMR of co ion implantation discontinuous multilayer films is greater than that of without ion implantation films.
退火对离子注入后的非连续多层膜gmr效应的影响比未注入离子的非连续多层膜gmr效应的影响显著。
The effect of anneal on the GMR of co ion implantation discontinuous multilayer films is greater than that of without ion implantation films.
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