描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。
Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs).
应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。
The Single Event Effect(SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories(SRAMs).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
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