通过调节门电压可以较好地控制静电势孤子的形状及其位置，从而达到对电荷孤子的有效控制。
By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.
计算了在100V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。
Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.
磁场越大同一门电压下电导增加的振幅越大，自旋轨道耦合引起的震荡变的越强，并使探针对电导的影响减小。
For a given gate voltage and a higer perpendicular magnetic field, the conductance and the oscillations amplitude induced by spin-obit coupling are increased.
在连接交流电源之前，请验证交流电压、相位和频率是否与控制装置外壳门参数板上的相应数据相同。
Verify ac line voltage phase and frequency with the controller data plate on the enclosure door prior to connecting ac power.
偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。
How to choose the bias voltage, the width and the period of the gated pulse is very important.
提出了一种不同阈值电压反相器控制的传输门组合结构。
A combinational structure of the transmission gate in the inverter control with different threshold voltages is presented.
传统高电压技术是一门试验型学科，理论与实践在研究工作中占有相当比例。
Technology of traditional tall voltage is an experiment course, theory and practice are had in studying the work quite scale.
目前，集成门极换向晶闸管（IGCT）被广泛地应用于不同的领域，诸如中电压传动（MVD）和扣联锁电力网等。
Today Integrated Gate Commutated Thyristors (IGCT) are widely used for different applications such as medium voltage drives (MVD) and interties.
这种输出特性还便于AD590实现多路复用：输出电流可以通过一个CMOS多路复用器切换，或者电源电压可以通过一个逻辑门输出切换。
The output characteristics also make the AD590 easy to multiplex: the current can be switched by a CMOS multiplexer or the supply voltage can be switched by a logic gate output.
采用电压曲线控制门机运行速度，提高了门机运行的精确性和平滑性。
In order to improve the accuracy and smoothness of door's running, a timing method is put forward which is that taking advantage of voltage curve to control the speed curve.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
该锁配备12/24伏电压传感输入，门静态和对准传感器，横向和纵向对准调整，以及浮动电枢。
The lock features a 12/24 VDC voltage-sensing input, door static and alignment sensor, lateral and vertical alignment adjustment, and a floating armature.
因为神经递质和受体结合（配位）启动了这些离子通道， 所以他们被称为配位门通道，以区别于电压门通道。
Because the binding of the neurotransmitter (ligand) to the receptor activates these ion channels, they are called ligand-gated channels to distinguish them from voltage-gated channels.
其次对集成电路内所需要的基本模拟及数字电路如有源电阻、电流镜、电压比较器、与门及或门进行了设计和仿真。
Then the all basic-circuits are also designed and simulated carefully including active resister, current mirrors, comparator, inverter, AND gate, OR gate.
通过设置死区时间实现开关功率器件的零电压开通与关断，利用该变换器研制出GTO门极驱动用电源。
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter.
通过设置死区时间实现开关功率器件的零电压开通与关断，利用该变换器研制出GTO门极驱动用电源。
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter.
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