1885年，当门捷列夫描述过的埃卡-硅被发现并命名为锗时，也带来了额外的支持。
Additional support came in 1885 when eka-silicon, which had also been described in advance by Mendeleyev, was discovered and named germanium.
锗形成了两性氧化物 GeO2和阴离子锗酸盐，如Mg2GeO4。
Germanium forms an amphoteric oxide GeO2 and anionic germanates, such as Mg2GeO4.
硅和锗都需要在高温下层叠。
Both the silicon and the germanium were deposited at high temperatures.
这同样也是第一速在室温下得到控制的锗激光。
It s also the first germanium laser to operate at room temperature.
无疑说明形成腐殖酸锗络合物。
No doubt, these illustrate the formation of humic germanium complex.
研制出了一种新型锗酸盐声光玻璃。
测试产品的含锗量能够显示其危险性。
Tests on products containing germanium showed there was a risk.
锗是常用的红外光学材料。
那时还没发现的元素就是钪，镓，锗和锝。
They turned out to be the undiscovered elements scandium, gallium, technetium and germanium.
在水热体系中合成了一种新型全锗沸石分子筛。
A new type of Germanic zeolite was synthesized in hydrothermal system.
薄膜的膜厚不可以超过由锗浓度所决定的最大数值。
The film thickness cannot exceed a maximum value which depends on the Ge content.
本文主要阐述的是微量锡与微量锗分离与富集的研究。
The separation and enrichment of trace tin and trace germanium was researched in this paper.
本文介绍一种全凭手工切割大口径锗单晶的切片方法。
The method to slice large diameter Ge crystal by hand is shown.
本文也探讨了基体改进剂硝酸钙对锡和锗的增感机理。
The mechanisms of enhancement of tin and germanium signals have been discussed.
控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
实践证明，该工艺是从锗残渣中回收锗的一条有效途径。
Results show that the process is a effective way to recover germanium from Ge residue.
分析了锗产量增长速度不快的原因和当前应用领域现状。
The reason of the slow development of germanium production and application has been analysed.
锗是一种半导体材料，其导电系数介于导体与绝缘体之间。
Germanium is a semiconductor material with its conductivity lying between that of conductors and that of insulators.
在硅的容量达到极限后，锗有望成为下一个伟大的芯片材料。
Germanium could be the next great chip material after silicon's limits have been reached.
除此之外，相对于含量稀少的锗元素，硅是相当普遍的化学元素。
Also, silicon is a very common chemical element, whereas germanium is relatively rare.
所以，本论文采用锗元素来合成杂化材料底物，这是一种新的合成方法。
So, we can synthesize mesoporous hybrid materials with germanium element, this is a kind of new synthetic method.
改变锗原子的连接角度和长度的同时，将它们的电子踢到传导带所需的能量也变化了。
Changing the Angle and length of the bonds between germanium atoms also changed the energies required to kick their electrons into the conduction band.
有别于通常用于激发激光的物质，锗元素可以很容易的融入目前广泛使用的硅制芯片。
Unlike the materials typically used in lasers, germanium is easy to incorporate into existing processes for manufacturing silicon chips.
镓砷化物，硅，和锗元素都属于半导体，而如今半导体在所有的现代电子元件中都会用到。
Gallium arsenide, silicon, and germanium are all examples of semiconductors, the type of material used in virtually all modern electronics.
含铀、锗煤主要为煤化程度低的褐煤，属于半暗-半亮、暗-亮煤及亮-暗煤。
Uranium, germanium-bearing coals are mainly lignites of low grade incoalation and belong to semidurain, semiclarain.
采用相位掩模版法实验研究了高非线性掺锗光子晶体光纤中布拉格光栅的制作。
Fabrication of the Bragg grating in a highly nonlinear photonic crystal fiber was investigated experimentally by phase mask method.
现在，制造商们看到硅连续小型化生产存在的问题，因此，锗正经历着复兴之路。
Now, as manufacturers see problems with the continued miniaturization of silicon, germanium is experiencing a revival.
通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。
Electron probe microanalyses and Hall effect were used to measure the variations of Ge dopant and its related donor and acceptor concentrations.
MIT的研究者们将较低这个能级用磷原子所带电子来填充，他们加入到锗中的即是这种东西。
MIT researchers fill up the lower-energy state with extra electrons from phosphorous atoms, which they add to the germanium.
MIT的研究者们将较低这个能级用磷原子所带电子来填充，他们加入到锗中的即是这种东西。
MIT researchers fill up the lower-energy state with extra electrons from phosphorous atoms, which they add to the germanium.
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