在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
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