因此铜是制备金刚石厚膜的理想基体材料。
These indicate that copper is an ideal substrate for the preparation of thick diamond films.
但在金刚石厚膜钎焊刀具的加工过程中，还存在许多问题。
But there are many problems in the process of making brazing diamond film tools.
用燃焰法进行了金刚石厚膜的沉积实验，制备了厚度约0。
The thick diamond film (0 6 mm) has been synthesized by the combustion flame CVD.
本文采用了机械研磨法来研磨CVD金刚石厚膜，研磨速率达6。
In the paper, mechanical lapping was used for lapping thick CVD diamond and the lapping rate was 6.
最后介绍了在计算机控制之下金刚石厚膜，纳米金刚石薄膜以及复合膜的生长。
Finally, the growth of diamond thick film, nano-diamond thin film, and composite diamond film under the control of computer were explained.
用X射线衍射法测定金刚石厚膜的残余应力，研究机械抛光对膜内残余应力的影响。
The residual stresses of the diamond film were measured by X-ray method, and the effect of the polishing condition on the stresses was investigated experimentally.
采用高功率直流电弧等离子体cvd工艺制备了不同厚度的无裂纹自支撑金刚石厚膜。
Diamond film wafers with different thickness were prepared by high power DC arc plasma jet CVD method.
本文以CVD方法制备的自持金刚石厚膜为基片，沉积压电薄膜并系统研究了压电薄膜的各项性能。
In this dissertation, Freestanding Thick Diamond films (FTDF) prepared by CVD method are applied as substrates of piezoelectric materials and the piezoelectric films are investigated systematically.
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
指出了采用厚膜CVD金刚石钻头进行高速钻削加工是获得高质量孔的良好方法。
It is pointed out that the high speed drilling by using the thick film CVD diamond drill is a good method to get high quality holes.
指出了采用厚膜CVD金刚石钻头进行高速钻削加工是获得高质量孔的良好方法。
It is pointed out that the high speed drilling by using the thick film CVD diamond drill is a good method to get high quality holes.
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