氢分子吸附后，费米能级处的局域态密度增加。
The local density of states at the Fermi level increases with the adsorption of hydrogen molecules.
辐射强度由存在准费米能级差的体积的吸收率决定。
The emission intensity is given by the absorptance of the volume in which there is a difference of the quasi Fermi energies.
从准异质结的概念出发，讨论了表面费米能级钉扎现象。
Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed.
考虑费米能级随二维电子气浓度的变化，计算了器件的直流特性。
With the two dimensional electron gas model, considering the nonlinear shift of Fermi level with electron gas density, the DC output characteristics is calculated.
参与导电过程的电子，我们称之为自由电子，其能量高于费米能级。
The electrons that participate in the conduction process are termed free electrons, which have energies greater than the Fermi energy.
在任何载流子密度条件下，辐射强度与准费米能级差的关系保持不变。
At all carrier densities, the relation between emission intensity and difference of the quasi Fermi energies is maintained.
在电中性条件下，用迭代法求出费米能级与电导率，与实验结果吻合较好。
The Fermi level and conductivity have been recursively calculated under the electroneutrality condition, which are in fairly agreement with the experiment.
由于管束效应，在费米能级处出现了赝隙，并在透射概率曲线中造成陡峭的透射凹谷。
As the effect of external perturbation of SWCNT rope, a pseudogap of about 0.1 eV at the Fermi level appears, and it makes a deep valley in the transmission probability curve.
计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。
Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.
光照时电导率增加，光注入后因光生载流子对缺陷态的填充使费米能级上移，从而使激活能减小；
Their Fermi levels moved upward as the defect states were filled by light generated carriers. As a result, their activation energies decreased.
在具体的实际应用中，根据自己的实验情况，结合推导条件，选择出适合自己实验条件的费米能级公式加以应用。
In special application according to experimental condition, Fermi energy that suit experimental condition are choosed together with deduction condition when applied.
该现象是由薄膜中金属超微粒子内费米能级附近电子被飞秒激光脉冲激发所产生的非平衡态电子经历瞬态弛豫造成的。
The optical relaxation is a process in which nonequilibrium electrons, excited by laser pulses and originating from near Fermi level in Cu ultrafine particles, return to the equilibrium state.
提出采用矿物浮选常用参数，即矿物静电位和矿物颗粒表面动电位来计算硫化矿物的费米能级和边缘能级的简便方法。
The simple methods are put forward to calculate Fermi level and edge level of sulfide mineral by means of potential of mineral electrode and zeta potential of mineral surface.
建立了一种用于解释正电子寿命谱测量结果的模型，该模型中费米能级位置的改变可影响缺陷的电离以及正电子在缺陷位置的被捕获。
The average positron lifetimes was explained by a proposed model, in which the shifting of Fermi-level affects the defect ionization and consequent positron trapping at defects site.
本文根据费米气体模型理论，研究金属中自由电子气的能量，讨论电子的最高能量、平均能量和电子气的能级密度。
This paper, based on the Fermi gas model, studies the energy of free electron gas in metal, discusses the highest energy, the average energy and the energy level density of free electrongas.
当激子系统趋近统计平衡时，该公式就自动过渡到具有角动量的费米气能级密度公式。
When the exciton system closes to the statistical equilibrium, this exciton state density automatically approaches to the Fermi-gas nuclear level density with angular momentum.
利用费米气体模型和区域密度近似分别计算单粒子能级密度，通过单粒子能级密度求得中等质量碎片（IMF）的内部配分函数。
The single particle level densities, calculated with the local density approximation and Fermi gas model respectively, are used to obtain the partition functions.
利用费米气体模型和区域密度近似分别计算单粒子能级密度，通过单粒子能级密度求得中等质量碎片（IMF）的内部配分函数。
The single particle level densities, calculated with the local density approximation and Fermi gas model respectively, are used to obtain the partition functions.
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