（计算机科学上）储存在读写存储器中的适合计算机系统操作的联合文件及所写程序。
A sequence of machine code instructions stored within the operating system, and sometimes in read-only memory, which is used to simulate hardware functions.
Memory：用于自真实存储器中读写数据的时间。
Memory: Time spent reading and writing data to and from real memory
金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
智能卡也称CPU卡，同普通的IC卡相比，它具有自己的CPU，存储器，读写系统和卡内操作系统COS。
Smart card is also called CPU card. Compared to common IC card, it contains CPU, memorizer, I/O system and Chip Operating Syestem (COS).
针对存储器和寄存器文件增加了EDAC检错纠错器对其读写过程进行检错和纠错。
EDAC error detector and corrector have been implemented to improve the reliability of register file and memory during read and write process.
针对这个问题给出位线“间隔译码”的组织结构，有效地降低了存储器读写时寄生rc所带来的串扰。
In this paper, we discuss a new memory array-interval decoding architecture, which decreases cross talk parasitical rc aroused effectively during the period of read and writing operation.
挂接在PC I用户端的存储器可以复用PC I AD总线完成主设备对其进行的读写操作。
The peripheral memory as a PCI slave device can exchange data with the master device based on the model proposed.
采用位线平衡技术、高速两级敏感放大器及可预置电压的数据输出缓冲，以提高存储器的读写频率。
A fast access time is obtained by utilizing a bit line equalizing technique, a high speed hierarchical sense amplifier and a preset data output buffer.
系统选w 78le516单片机和CPLD来构造控制电路，用读写速度快、功耗低的低电压外部数据存储器CF卡存储采集完的信号。
The system select W78LE516 MCU and CPLD to construct the control circuit and use quickly read and write low power consumption, low-voltage external data memory CF card to save the signal.
在存储器单元比值一定的条件下，采用这种结构可以显著减小由寄生rc所带来的单元间的串扰，提高存储器读写的速度和工作可靠性。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
在存储器单元比值一定的条件下，采用这种结构可以显著减小由寄生rc所带来的单元间的串扰，提高存储器读写的速度和工作可靠性。
When the cell ratio is given, the disturb induced by the parasitical RC can be effectively reduced, the read-write speed of the memory and operation reliability are improved by this method.
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