木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
岛面密度与膜厚的依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值。
The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates.
工艺研究结果表明，衬底材料对制备该新型纳米碳膜具有关键作用，离子能量、工作压力及气氛等工艺因素也具有重要作用。
Process review shows that the substrate material is the key factor for the carbon films deposition, and the parameters of ion energy, pressure and methane ratio are impotent also.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
研究了不同衬底上纳米金刚石膜场电子发射性质。
The electron field emission from nanocrystalline diamond films on different substrate materials was investigated.
采用钛铝-钼过渡层，金刚石膜和铜衬底间的结合力大大提高。
Results showed that adhesion between film and copper substrate could be greatly improved using such interlayers.
本文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
衬底温度决定原子的表面迁移率，衬底温度是影响淀积的铝膜的均匀性和台阶覆盖能力的主要因素。
Therefore, the substrate temperature was the main factor which obviously affected the atoms distribution and step coverage of Al thin films.
光阴极由衬底(包括介质阴极的导电基底)和光电发射膜构成。
The photocathode consists of a substrate (involving a conductive base film for dielectric cathode) and a photoemission film.
切割膜框架带、减薄的半导体衬底和C4研磨带的组件。
The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced.
玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。
The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.
研究了衬底材料、基片温度对膜微结构的影响。
The effect of substrate materials and its temperature on film micro structure is studied.
铁电电容器形成在衬底上并由一叠层体制成，该叠层体由依次叠置的下电极、电容器铁电膜和上电极构成。
A ferroelectric capacitor is formed above a substrate and made of a lamination of a lower electrode, a capacitor ferroelectric film and an upper electrode stacked in this order.
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
新工艺由自持连续有机衬底的制备、铝膜的沉积和防离子反馈膜的贴附三道工序组成。
New technology includes the preparation of a self-supporting continuous organic substrate, deposition of aluminium film and the film-posting.
为了解决金刚石膜脱膜开裂的问题，尝试了一种复合衬底，即镀有钛过渡层的钼衬底。
A type of composite substrate was explored to solve the problem of crack in the deposition of diamond films, that is, mo substrates with ti interlayer.
同时发现衬底晶格是否匹配与C_（60）取向膜的生长关系不大，而具有弱表面键的衬底有利于C_（60）膜的取向生长。
Moreover, the substrate with weak surface dangling bands was found to be necessary for the oriented growth of C60 films.
迭代法在计算透明衬底透明膜的参数时，可能会出现局部极小的错误，分析了产生该错误的原因。
When calculate the ellipsometry parameters of the transparent film on the transparent substrate, there may be a local minimum error, and analyse the cause of error.
提高金刚石薄膜与铜衬底附着力的关键是减小沉积结束后降温过程中产生的膜基热应力和提高膜基间化学键结合。
Reducing the thermal stress between film and substrate during the descent temperature process and improving chemical bonds combination is a key problem to enhance thee adhesion.
本发明提供一种保护掩膜板的方法，所述掩膜板包括：衬底；
本公开涉及一种在可以形成LED或其他类型显示器的衬底上沉积膜的方法。
The disclosure relates to a method for depositing films on a substrate which may form part of an LED or other types of display.
而其下层金属膜一般较厚，用以隔绝镀膜衬底材料对波导结构的影响；
On the contrary, the base metal film is usually thicker to block the light from leaking into the substrates.
本发明还提供了一种包括处理系统的处理工具，处理系统用于利用HCD处理气体在衬底上形成含硅膜。
A processing tool containing a processing system for forming a silicon-containing film ons substrate using a HCD process gas is provided.
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
实验表明，间歇式沉积可大大增加膜厚而不影响膜与衬底的附着性。
The experimental results show that the thickness of the deposited films is greatly increased but the adhesive streng…
实验表明，间歇式沉积可大大增加膜厚而不影响膜与衬底的附着性。
The experimental results show that the thickness of the deposited films is greatly increased but the adhesive strength between t…
实验表明，间歇式沉积可大大增加膜厚而不影响膜与衬底的附着性。
The experimental results show that the thickness of the deposited films is greatly increased but the adhesive strength between t…
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