可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。
This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。
Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
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