文章分析了半导体薄膜生长工艺流程的特点。
The process characteristics of growth of semiconductor film are analyzed.
最后对蒙特卡罗方法模拟薄膜生长的研究进行了展望。
At last, the study of using Monte-Carlo method to simulate the growth of thin films by physical vapor deposited is also predicted.
本文提出了一个高压条件下的PANI薄膜生长模型。
文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
建立了定向薄膜生长的物理模型，提出了碳纳米管的开口生长机制。
A physical growth model was established for aligned CNT films, and the open-end growth mechanism of CNTs was proposed.
运用蒙特卡罗方法，模拟了不同条件下的物理气相淀积薄膜生长过程。
The simulation of physical vapor deposition by Monte Carlo method using a new physical model is presented in this paper.
通过设计与模拟，分析了DBR中薄膜生长顺序与层数对器件性能的影响。
The order of thin films of DBR is analyzed and determined by design and simulation.
半导体超晶格和量子阱材料是用现代薄膜生长技术制成的一种新型的人造材料。
Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques.
随着薄膜生长速率的降低，锡膜由金属转变为半导体，呈现出非金属导电特性。
The specimens deposited at lower rate show some nonmetallic properties. In the present paper, the result as mention above is interpreted from the theory of Anderson localization.
利用分子动力学模拟方法，从原子尺度上研究了类金刚石（DLC）薄膜生长过程。
Molecular dynamics simulations are performed to study the growth of diamond_like carbon (DLC) films on the atomic scale.
在该模型中，我们考虑了沉积速率、沉积温度以及沉积角度等影响薄膜生长的参数。
By simulation of thin films growth, some microscopic processes can be revealed in extreme condition, such as high temperature and high deposition rate.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
通过反射高能电子衍射(RHEED)仪原位实时监测薄膜生长，研究薄膜的生长过程。
The growth process of the films was in situ monitored by reflective high energy electron diffraction (RHEED).
论述薄膜生长过程中影响薄膜附着力的各种因素，针对其相关因素作了具体的理论分析。
The different kinds of factors which affect the adhesion of the film in its coating are described and analyzed.
利用计算机模拟了超薄膜中分形凝聚体的生长，考虑了薄膜生长过程中的团簇扩散和旋转。
The growth of fractal mrophology in ultra thin films has been simulated by supposing various cluster diffusion steps and the rotation of clusters.
薄膜生长技术的进展，为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。
Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films.
薄膜生长过程中的结构和形态的研究在很多领域都有实际的应用，特别是在半导体制造领域。
The study of the thin-film structure and morphology during the thin-film growth has practical application in many areas, in particular in semiconductor industry.
通过反射高能电子衍射 （RHEED）仪原位实时监测薄膜生长 ，研究薄膜的生长过程。
The growth process of the films was in situ monitored by reflective high energy electron diffraction(RHEED).
高温超导薄膜生长是研究超导现象和超导器件的基础，一直是凝聚态物理研究的一个重要课题。
High temperature superconducting film growth is the basis of superconducting phenomenon and superconducting devices, and it is the important subject of condensed matter physics research.
本实验中气流量也是影响薄膜生长的重要因素，气流量过大，分子没来得及落到衬底表面就被吹走；
The air current in the experiment is also a key point that affects the growth of the film.
用分子动力学和薄膜生长的扩散限制聚集模型，薄膜中结瘤微缺陷成核时的分形现象得到了很好的解释。
By using the molecular dynamics theory and diffusion limited aggregation model of film growth, the fractal phenomenon of the nodule nucleation was well explained.
根据测试结果分析了薄膜的生长机制，提出了薄膜生长是分步成核，成核后沿(111)面纵向生长的观点。
The film growth mechanism is analysed on the basis of the test results. The standpoint of the nucleation by step and then vertical growth along (111) direction is put forward.
利用特殊设计的夹具，在同一真空内完成所有薄膜样品的制备，减少了多次沉积过程对薄膜生长特性的影响。
With specially designed fixture, all samples were prepared in the same run, which diminished the effect of multi-runs on the growth of thin films.
由于薄膜的生长过程是一个随机过程，所以蒙特卡罗方法便很自然地被应用于计算机仿真薄膜生长这一过程。
Since the growth process of thin film is of the random state, Monte Carlo method has naturally been used in the process of computer simulation for the growth of thin films.
其中原子水平迁移是薄膜热弛豫的主要途径，入射原子的注入和迁移行为相互竞争，决定了薄膜生长的模式和最终结构。
The transverse migration of the atoms is the main route of film relaxation. The competition between atomic implantation and migration determines the growth mode and final structures of the film.
室温下，UO_2表面的铝薄膜是以岛状方式生长的，生长过程中由于扩散行为的影响，导致确定薄膜生长方式的强度变化曲线发生了畸变。
At room temperature, al thin film growth on UO_2 followed the VW mode. Under the influence of diffusion action, intensity curves which determine thin film growth mode have some alteration.
薄膜内层间隙足够小，细胞不会渗漏出去。膜的外层间隙足够大，血管能沿着膜面生长。
The inner layer of the membrane is small enough to prevent the cells from leaking out, but the outer layer is large enough to encourage blood vessels to grow along the membrane.
薄膜内层间隙足够小，细胞不会渗漏出去。膜的外层间隙足够大，血管能沿着膜面生长。
The inner layer of the membrane is small enough to prevent the cells from leaking out, but the outer layer is large enough to encourage blood vessels to grow along the membrane.
应用推荐