在较高的温度下，非晶自发成核和晶化，从而限制了金属诱导晶体生长速度。
The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the...
在较高的温度下，非晶自发成核和晶化，从而限制了金属诱导晶体生长速度。
The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the MILC growth, the...
在较高的温度下，非晶自发成核和晶化，从而限制了金属诱导晶体生长速度。
The nucleation and crystallization of a-Si will occ ur spontaneously at higher temperature, which will restrict the MILC. The length and thickness of Ni source also affect the MILC growth, the...
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