由于管束存在管间相互作用，电子的束缚度减小，导致能隙减小。
The intertube coupling causes the energy gaps to decrease for the electrons in the rope are less confined.
这预示着第二个超导能隙的出现。
证明这方程与BCS能隙方式相等。
Show that this equation is identical to the BCS gap equation.
我们同样调查了不同能隙的影响。
能隙对称性；自旋涨落；局域态密度。
各种结构的能隙中存在明显的尺寸效应。
Energy gaps of different kinds of structures presence distinct size effect.
找出能隙消失的临界速度。
我们比较了不同状态方程和不同能隙的结果。
给出了椭圆函数波的能隙、有效质量和束缚能。
The energy gap, the effective mass and the bind energy of cnoidal waves are given.
光子晶体是一种具有光子能带及能隙的新型材料。
Photonic crystal is a new kind of materials with photonic band gap.
对碱土金属复卤化物的能隙进行了计算，结果合理。
The calculated results of energy gap on alkaline earth mixed halides are reasonable.
计算了单个晶胞的基态能、自旋关联函数以及自旋能隙。
The ground energy per unit cell, spin correlation function and the spin gap are calculated.
计算得到的磁穿透深度和相对能隙与实验结果符合得相当好。
The calculated results for magnetic penetration depth and the reduced energy gap agree very well with the experimental data.
介绍了用循环伏安法确定导电聚合物能隙和能带参数的方法。
Energy gap and energy band parameters were determined by using cyclic voltammetry.
从得到的色散曲线看到等离子体光子晶体具有光子能带和能隙结构。
The dispersion curves showed that plasma photonics crystal has the structure of photonic energy band and energy gap.
反式聚乙炔在重掺杂时会出现孤子晶格，在能隙中央形成孤子能带。
Because soliton lattice should be emerged in trans polyacetylene whe.
结果表明，-U中心的存在使激发谱“能隙”内出现很小值的态密度。
Results show that a small density of states due to the -U centers exists in the region of "energy gap".
测试了其粉末倍频效应、透光范围、热稳定性、并估算了其能隙大小。
The powder SHG, transparent ranges, band gap and thermal property was tested.
证明在磁性杂质附近，可能形成一个束缚态的元激发，其能量位于能隙之中。
It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap.
数值结果表明：随着温度的升高，单电子态密度所呈现的库仑能隙逐渐消失；
Numerical results clearly show that the Coulomb gap in the single-electron density of states is filled gradually up as the temperature increases.
通过电子结构的计算和分析，发现所有BC2N结构中均存在能隙，具有半导体特性。
It is found that all BC2N structures have energy gaps, which indicates that they are semiconductors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
同时，为了与前人的结果进行比对，我们还计算了第一激发能隙和磁化率等热力学量结果。
In order to compare with the previous work, some numeric results of the first excitation gap and susceptibility are also given.
同时，为了与前人的结果进行比对，我们还计算了第一激发能隙和磁化率等热力学量结果。
In order to compare with the previous work, some numeric results of the first excitation gap and susceptibility are also given.
应用推荐