晶体管在耗散功率时，结温分布一般不均匀。
When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
如果负载被连接到电流源，则电流流经负载并耗散功率。
If a load is connected to the current source, current flows through the load and power is dissipated.
根据阻尼器的加载过程分析，提出了阻尼器耗散功率概念。
Based on the analysis of damper movement during load test period, a concept for the dissipation power of damper is suggested.
晶体管（光敏晶体管除外）耗散功率少。于1瓦。 千。
Transistors (excluding photosensitive transistors) with a dissipation rate of less than 1 watt …
本文论述了如何设计IGBT散热器，以提高其耗散功率，同时介绍了IGBT过热检测保护电路。
This paper discussed that how to design IGBT radiator to improve its radiating capability and introduced the protective circuits for IGBT overheat check.
在此基础上，本文从电路理论出发，推导出一种基于耗散功率转归分量理论的电网损耗分摊的新算法。
On this basis, from the circuit theory, a loss allocation method using imputation components of dissipation power is proposed.
结合含碳铬矿粉在微波场中的比热容、介电性质等热及物理性质的变化，通过计算模拟得出微波耗散功率与温度的关系，进而拟合出含碳铬矿粉的升温曲线。
The relationship between dissipation power of microwave and temperature can be solved by calculation, then the temperature-rising curve fitting of carbon-containing chromite fines can obtain by it.
该电阻器还应当有足够高的额定功率，以满足齐纳管导通时的功率耗散要求。
The resistor must also be rated high enough to meet the power dissipation requirements while the zeners are conducting.
主要研究了PT C材料的开关温度、样品的室温电阻及耗散系数等特性参数对发热体功率的影响。
The influences of the PTCR's characteristic parameters such as switching temperature, room resistance of samples, and dissipation coefficient, etc. on the thermal power of heaters are investigated.
TSPD的主要优势在于其小巧的体积、导通状态下较低的功率耗散以及精确的“转折”电压。
The main superiorities of TSPD device are small volume, lower power dissipation and precise transition voltage.
这可以从不同的焊接到焊盘尺寸为最大功率耗散，和灰给定的最小焊盘尺寸。
This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation.
这是最有效的方法，扩增，因为输出设备的最大功率耗散没有输入信号。
This is the least efficient method of amplification, because the output devices are dissipating maximum power with no input signal.
由此关系式可以看出，当电流增加一倍时，器件的功率耗散会增加到4倍。
From this relationship, we see that the power dissipated in the device increases by a factor of four each time the current doubles.
由试验得出变形过程中的真应力真应变曲线，并利用本构方程对流变应力值进行修正，进而根据修正后的应力值绘制功率耗散图。
The flow stress was corrected by the constitutive equation and the power dissipation map was obtained using the corrected stress.
基于剪切功率的耗散机理，提出了一种计算振动剪切流场中聚合物熔体动态黏度的粘性耗散法，并建立了理论模型。
Based on dissipation mechanism of shearing power, a new method of modeling dynamic viscosity of polymer melts in vibrating shear flows was proposed in this paper.
如果这发生得过快或过于突然，则IGBT开关将由于导通瞬间的过度的电流和功率耗散而击穿。
If this happens too soon or too abruptly, the IGBT - switch will break down due to excess current and power dissipation at the moment of switch-on.
其中相互连接问题和功率耗散是造成这一速度减慢的主要技术限制。
In which the issue of interconnection and power dissipation caused the slower pace of the main technical constraints.
内部同步整流控制电路，以提高功率耗散在PWM操作。
Internal synchronous-rectification control circuitry is provided to improve power dissipation during PWM operation.
利用悬浮试样在热平衡状态输入功率与能量耗散平衡，从而得到合金的高温热辐射系数。
A method of indirectly measuring the heat emissivity for alloys is presented in this paper.
利用悬浮试样在热平衡状态输入功率与能量耗散平衡，从而得到合金的高温热辐射系数。
A method of indirectly measuring the heat emissivity for alloys is presented in this paper.
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