图2所示为管芯连接的基本结构。
管芯混凝土采用立式震动工艺成型；
Tube core concrete was formed with vertical vibrating technique.
肋从管芯的一侧或两侧凹陷。
管芯套、精密连接零件；
胀起后自动胀紧管芯。
公开了用于测试快闪存储器管芯的方法、系统和设备。
The present invention discloses methods, systems and devices for testing flash memory dies.
公开了方法和设备，其中，打印头管芯包括缝和横跨缝的肋。
Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot.
来自感测管芯的感测输出信号能够传送到一个或者多个放大器电路。
A sensed output signal from the sense die can be transferred to one or more amplifier circuits.
第一管芯，其包括管芯表面和位于所述管芯表面上的管芯接合焊盘；
The die comprises a plurality of die joining bonding pads on the surface of the die.
实验组以带管芯的气管导管行盲探经鼻气管插管术，对照组则不带管芯。
The catheters with core was selected in experiment group, and without core in control group.
内透镜与所述发光二极管芯片一起封装，封装后的二极管模块包括底座；
The inner lens and chip of LED are sealed together. The sealed LED module includes base;
基于SWB环境实现了nm级NMOS集成化管芯的可制造性设计及优化。
Based on the SWB environment, the design for manufacturing and optimization of the nano-level NMOS integrated chips were implemented.
本发明包括手柄和钻头，钻头为套管针结构，包括套管和管芯针两部分组成。
The invention comprises a handle and a drill bit, wherein the drilling bit has a trocar structure consisting of two parts, namely a sleeve and a tube core needle.
本发明包括手柄和钻头，钻头为套管针结构，包括套管和管芯针两部分组成。
The invention comprises a handle and a drill bit, wherein the drill bit takes the structure of a trocar and consists of two parts of a sleeve and a mandrin;
通过局域注氧工艺，在同一管芯上制作了DSOI、体硅和SOI三种结构的器件。
DSOI, bulk si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
本文主要介绍了大功率管芯共晶设备的主要功能、技术指标、机械结构、电气控制等。
Mainly introduce the function of the eutectic bonder applied to high power die, the technology target, the structure of the machine and the electric control.
本发明是借助中间像浸没的技术，增大反射角、减小直光管芯径，缩短直光管的长度。
By means of intermediate image immersing technology, the present invention has increased reflection Angle, reduced straight collimator core diameter and shortened straight collimator length.
图。1所示的是由两个平行解理面和二个锯出的(粗糙)侧面组成的激光二极管的管芯。
Figure I. 1 shows a basic laser diode chip which consists of two cleaved parallel facets and two sawed (roughened) sides.
注入电流不变时，其输出光功率随管芯温度的升高而减小；峰值波长随温度升高而增大。
The peak wavelength decreases with the increasing of work current, however it increases with the rising of temperature.
通过对试制管芯的测试，基本电性能有了明显的改善，说明了制作方案是合理的、可行的。
By testing chips, there are great improvements in basic electrical property. All of these measures prove our manufacture plan is correct and reasonable.
本发明还涉及一种深亚微米mos集成电路管芯，包括基于厚氧化物晶体管的前置放大器。
The present invention further relates to a deep sub-micron MOS integrated circuit die comprising a thick-oxide transistor-based preamplifier.
在另一个实施例中，具有多个VR的功率管理系统可以在与众核处理器的管芯分离的管芯上。
In another embodiment, the power management system with multiple VRs may be on a die (' the VR die ') separate from the die of the many-core processor.
实现上述方法的工具，设有管状成型模具，还设有管材原料芯轴、导管芯轴和成型模具芯轴。
The tool for realizing the method is provided with a tubular forming mould, a tube raw material mandrel, a catheter mandrel and a forming mould mandrel.
管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
根据本发明的又一方面，电荷平衡功率器件将诸如二极管的温度和电流感应元件结合在相同的管芯上。
According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die.
管芯测试结果亦表明，由于多晶硅膜的作用，薄发射区晶闸管的开通特性并未因发射区很薄而受影响。
Measured results for the tablets show that because of the role played by the polysilicon films, the turn-on properties of the thin emitter thyristors are not affected by the very thin emitter region.
剪切力是器件考核的基本项目，随管芯面积的增大而增大，这就对背面金属化可靠性提出了较高的要求。
Shearing force, which is necessary in device inspection, increases with the die dimension, and challenges the reliability of back metallization process greatly.
提供了一种新的二极管芯片识别检测的任务规划方法，并提供了相应的数据结构，以及参数的计算方式。
A new task planning of diode chips detection, the corresponding data-structure and the calculation method of correlative parameter are put forward.
该传感器由一个精密的，低失调线性的霍尔传感器电路，以及一个位于管芯表面附近的铜质传导通路组成。
The device consists of a precision, low-offset linear Hall sensor circuit with a copper conduction path located near the surface of the die.
本文阐述了提高500A、2KV风冷硅整流元件质量的三个问题：提高500A、2KV以上管芯成品率；
Three problems are herein discussed: how to raise the rate of certificated 500A silicon wafers over 2KV;
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