• 疲劳断口具有穿晶解理特征。

    The thermal fatigue fracture belongs to cleavage fracture.

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  • 裂纹扩展沿穿混合模式

    The indentation cracks propagation is typified by an intergranular and transgranular mixed mode.

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  • 穿晶断裂比例增加延性提高原因。

    The increase in ductility can be attributed to the increase in ratio of transgranular fracture.

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  • 拉伸试样表面断口穿晶解理断口。

    Transgranular cleavage fracture is shown for the charged layer in tensile specimen.

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  • SC氢化磁体裂纹源于穿晶断裂。

    But for sc and hydrogenated magnets the crack source is the transcrystalline break of main phase.

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  • 低温拉伸时呈穿晶断裂断口主要为准解理台阶;

    And the low-temperature fracture was mainly quasicleavage step, this demonstrated that the fracture mede was transgranular type fracture.

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  • 裂纹形成后垂直加载方向扩展,试样穿晶断裂

    Once initiated, cracks would propagate perpendicularly to the loading direction and the specimens exhibited transgranular fracture.

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  • 结果表明黄铜开裂离子引起穿应力腐蚀开裂;

    The results showed that it was chlorine ion that resulted in transgranular stress corrosion cracking in brass tubes.

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  • 裂纹形成断裂为穿晶解理机制,应变可导致更多二次裂纹

    The fractography of the fatigue crack initiation displayed cleavage facet and more second cracks after pre-training.

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  • 渗透复合体断裂过程可见:裂纹偏转拔出穿断裂。

    In the rupture process of the composite, crack deflexion, crystal evulsion, and rupture through crystal could be observed.

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  • 裂纹传播则以沿穿方式在基体中扩展,最终引起材料失效

    These cracks propagate into matrix intergranularly or transgranularly, leading to the final material failure.

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  • 穿晶裂纹源于形变损伤区,扩展机制沿滑移面的剪切断裂

    Tranagranular cracks result from deformation damage of grain, and its propagation mechanism is shear rupture along slip plane.

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  • 纳米裂纹纳米大小裂纹可能导致穿晶断裂裂纹

    The nanocrack is a crack in nano size withingrain and it may cause transcrystalline fracture.

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  • 扫描电镜下原位准静态拉伸试验表明,合金的断裂行为穿晶韧性断裂

    The result of insitu-tensile test shows that the behavior of fracture is transcrystalline rupture.

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  • 裂纹扩展微观特征研究热影响区焊缝区的裂纹扩展均为沿穿混合型。

    Micro characteristic of cracks propagation research: the path of crack propagation in the heat-affected zone and weld metal is the mix of transgranular and intergranular.

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  • 腐蚀种钨试样沿脆断特征变得更为显著沿穿晶混合型脆性断裂

    The brittle morphologies become much more notable, and appear the inter-and trans-granular fracture mode after sodium corrosion at high temperature for both of W-specimens.

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  • 结果表明,当界面结合强时,复合材料主要发生穿晶破坏,材料韧性较好但强度较差;

    The results show that mechanical properties of interface have significant effect on the composite and its final fracture mechanism.

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  • 研究表明具有好的抗应力腐蚀性能,应力腐蚀断裂形貌为穿晶解理断裂二次裂纹

    The stress corrosion cracking sensitivity of the steel was low, and the fractography of its stress corrosion cracking showed transgranular and quasi-cleavage fracture with secondary cracks.

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  • 目前为止两种形式管道外表面的SCC渗透确认间scc中,一种是穿晶scc。

    To date, two forms of SCC penetration from the external surface of the pipeline have been recognized: one is the intergranular SCC, the other is a kind of transgranular SCC.

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  • 随着时效时间的延长,拉伸断口逐渐由韧窝穿晶型向沿突脊型沿韧窝型过渡。固溶状态下拉伸应力超过届服强度以后,出现平直滑移交叉滑移带;

    In the as-quenched condition, straight slip bands and cross slip bands are shown on the surface of specimens after tensile stress has reached the yield stress;

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  • 说明顶层的金属纳米作为额外电荷俘获层可以通过直接穿机制进一步延长保留时间提高电压漂移量

    The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.

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  • 由于以及颗粒内部增加自旋相关散射穿效应所致。

    It is due to the enhancement of spin dependent and independent scattering and tunneling effects on the interfaces of grain boundaries and inside the grains.

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  • 发明同时公开了一种多介质复合穿纳米存储器的制作方

    The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.

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  • 同时公开 了一种双层穿介质结构纳米非易失存储器制作方法

    The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.

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  • 同时公开 了一种双层穿介质结构纳米非易失存储器制作方法

    The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.

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