对于不同的三维光子晶体结构，随着介电常数比的增大，完全禁带的宽度和带隙率也会随着增大。
For all three kinds of three-dimensional photonic crystal structures, their band gap width and band gap ratio can be improved with the increase of dielectric constant ratio.
讨论了三种旋转操作对TE,TM模式带隙及完全光子禁带的影响。
The effect of rotation on te and TM mode band gaps and absolute band gap is investigated.
光子带隙结构中存在着类似于半导体中的禁带，称为光子带隙。
The place that exists in PBG structures is similar with the bandgap in semiconductor called photonic band gap.
光子带隙结构中存在着类似于半导体中的禁带，称为光子带隙。
The place that exists in PBG structures is similar with the bandgap in semiconductor called photonic band gap.
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