本文主要介绍了硅中硼离子注入校准样品的制备与研究。
Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.
通过对铅玻璃和石英玻璃的X射线光电子能谱的详细研究，发现硼离子注入后氧和硅的结合能峰稍有位移。
Based on the study of X-ray photoelectron spectroscopy of lead glass, it is found that the binding energy peaks of oxygen and silicon slightly shifted after implantation.
本文采用微波等离子体cvd法制备定向生长的金刚石薄膜。用冷离子注入法对金刚石薄膜进行硼掺杂。
The diamond films were fabricated by microwave plasma CVD and the boron-doped was created by the cold ion implantation.
用二次离子质谱测量了注入硼离子的深度分布。
Secondary ion mass spectrometry was used to measure the distribution of implanted depths of boron ions.
结果表明，引起注入硼异常扩散的是点缺陷，而不是硼间隙原子的快扩散。
The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron.
本文研究了硼离子注入硅经红外辐照退火后的热处理特性。
In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.
本文研究了硼离子注入硅经红外辐照退火后的热处理特性。
In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.
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