本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。
The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering.
动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。
Dynamic random access memory (DRAM) suffers from the bridge issue due to the WSix residue on gate sidewall, which is the bottleneck to enhancing the product's yield and reliability.
动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。
Dynamic random access memory (DRAM) suffers from the bridge issue due to the WSix residue on gate sidewall, which is the bottleneck to enhancing the product's yield and reliability.
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