本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
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