以往对门极可关断晶闸管电流放大系数的研究主要集中在定性分析。
We researched mainly on Gate Turn-off Thyristor in qualitative analysis before.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
实验结果指出，器件的电流放大系数器件大j、3结特性硬，无效触发分流小，可有效地缩短开通时间。
The experiment shows that if the current amplifier factor is big, Junction J_3 is hard and the ineffective trigger branch current is low, the turn-on time can be shorten effectively.
实验结果指出，器件的电流放大系数器件大j、3结特性硬，无效触发分流小，可有效地缩短开通时间。
The experiment shows that if the current amplifier factor is big, Junction J_3 is hard and the ineffective trigger branch current is low, the turn-on time can be shorten effectively.
应用推荐