在陶瓷基片上淀积了薄薄一层半导体。
A thin layer of semiconductor is deposited on a ceramic base.
语言负载了各种文化淀积。
发育良好，土表下有一层粘土淀积土层。
These soils are well developed and contain a subsurface horizon in which clays have accumulated.
该淀积层的面积和高度决定了球的最终尺寸。
The area and height of this deposition determine the ultimate ball size.
地貌部位不同，碳酸盐碳在剖面上的淀积深度不同。
The illuviation depth of carbonate carbon in soil is different from the different geographical locations.
还详细讨论了卤素原子在金刚石薄膜淀积过程中的作用。
Also, the functions of halogen atoms in CVD diamond deposition process are discussed in detail in this paper.
揭示了常规热丝法薄膜淀积工艺中热钨丝易断裂的原因。
The reason why tungsten wire is easy to break in the silicon thin film deposition process by hot wire deposition method was explained.
本研究还得到了能有效阻挡铜硅接触的钽膜的淀积速率。
The deposit rate of the ta film for efficiently obstructing the contact of si and Cu was also got.
给出了不同衬底温度下淀积薄膜中硼深度分布的一些特征。
Some of the characteristics of boron depth profile in these films were presented.
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
The higher value is comparable to those obtained in CVD epitaxy.
第三章为多孔硅表面氮化硅的淀积与转移技术的结果与讨论。
In the third chapter, results and discussions of substrate transfer of thick silicon nitride film were elaborated.
铝和它的合金能很好地粘附在热生长的和淀积的硅酸盐玻璃上。
Al and its alloys adhere well to thermally grown and to deposited silicate glasses.
用一个冷阴极离子枪产生的氧离子轰击淀积过程中的薄膜表面。
Oxygen ions from a cold cathode ion-gun have been used tor bombarding the growing thin films.
本文简述了淀积于基片上的薄膜中的应力的计算理论的演变过程。
In this paper, the developmental process of the calculating theory of the stress in thin films on the same substrate is described briefly.
他们应当去掉场极板和氧化层，并在整个区域淀积一层薄的铝薄膜。
They should remove the field plate and oxide and deposit a thin aluminum film over this region.
第8层古土壤特殊的厚层淀积代表了气候的多次变化和多个成壤期。
The thick illuvial horizon in the 8th paleosol layer indicates the repeated soil-forming processes and climate changes.
运用蒙特卡罗方法，模拟了不同条件下的物理气相淀积薄膜生长过程。
The simulation of physical vapor deposition by Monte Carlo method using a new physical model is presented in this paper.
铁的活化度白浆土高于黑土，而白浆土的白浆层又高于腐殖质层和淀积层；
The activated degree of iron in Albisol is higher than That in Black Soil.
实验表明用这种激光扫描淀积方法可使超导薄膜的均匀区域扩大10倍左右。
The results show that film thickness uniform areas enlarge about 10 times using this method.
与普通溅射方法相比，本设备的优点是：溅射电压大大降低，而淀积速率提高很多。
Comparing with general sputtering method, this equipment has the advantages of decreasing the sputtering voltage and increasing the rate of deposition obviously.
利用金属有机气相淀积方法生长了一种新型吸收体：高反射率半导体可饱和吸收镜。
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.
这些陷阱可能是在不同生长条件的介质膜淀积过程中等离子体引进的有关辐照损伤。
The origin of these traps might be due to irradiation damage induced by plasma during insulating layer growth process.
三个土壤剖面均有一定的漂洗和淀积粘化现象，但都不足以定义成漂白层或粘盘层。
Bleaching and characterization were morphologically apparent, but not well developed as to be defined as bleached or claying horizons.
微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。
The microwave electron cyclotron resonance (ECR) plasma is one of the most important means for depositing thin films and microfabrications as well as surface modifications of materials.
可用于单离子注入，离子束混合，单离子或反应离子束溅射淀积以及离子束增强淀积。
It can be used for single ion implantation, ion beam mixing, single ion or reactive ion beam sputter-deposition and ion beam enhanced deposition.
采用气凝胶与干凝胶两种催化剂载体通过化学气相淀积方法制备出螺旋状的碳纳米管。
Helical carbon nanotubes were synthesized by a chemical vapour deposition method from both silica aerogels and silica xerogels containing catalysts.
采用气凝胶与干凝胶两种催化剂载体通过化学气相淀积方法制备出螺旋状的碳纳米管。
Helical carbon nanotubes were synthesized by a chemical vapour deposition method from both silica aerogels and silica xerogels containing catalysts.
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