通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
提出了一种基于准浮栅技术的折叠差分结构，基于此结构设计，实现了超低压运算放大器。
A new folded differential pair topology based on quasi-floating gate technique is presented, and an ultra-low voltage op amp based on this structure is designed.
所述DRAM进一步包括与所述表面绝缘的浮栅，且位于所述第一区域和 所述第二区域之间。
The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
电解质：呈凝胶状态，电解液无分层、电池循环性能好；电解液密度低、减缓对板栅腐蚀，电池浮充寿命长。
Electrolyte: in gel state, no delamination, battery electrolyte circulation performance is good; The electrolyte density low, slow on board gate corrosion, floating battery life is long.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
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