如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
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