锅炉房内沟道上应有与地面平齐的盖板。
In the boiler room trench should have cover board at the ground level.
广泛应用于各类轴承沟道的磨削和加工。
由于轴承结构原因，沟道位置难以测量。
Because of the bearing structure, measuring racew ay position is difficult.
被排出的浆液通过沟道被送到吸收塔排水坑。
Then the slurry can be removing into the absorber pit through the trench.
冉阿让感到沟道在脚下陷落了，他踏进了泥浆。
Jean Valjean felt the pavement vanishing beneath his feet. He entered this slime.
沟道效应的运动阻尼与系统走向混沌的临界特征。
Motion damping in channelling effects and the chaotic behaviour of a system.
严重的沟道侵蚀显著增加了运移到流域出口的泥沙。
Because there is serious gully erosion, the sediment loading of watershed outlet is obviously added.
推导了了一个短沟道MOST阈值电压温度系数表达式；
We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
因此，控制和治理沟道的泥沙就成了解决黄河问题的关键。
Therefore, control and sediment control channel becomes the key to solving the problem of the Yellow River.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
对宽度比对组合沟道结构的牺牲层腐蚀特性的影响进行了研究。
Effect of width ratio on the etching behaviour of joint channel structure is studied.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
介绍了调心球轴承外沟道的磨削方法，并分析了各自特点及应用。
The grinding method of aligning ball bearing outer groove is introduced, and their characteristics and applications are analyzed.
采用LDD结构：3。在允许的范围内，适当增加器件的沟道长度。
Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
在1833年动工的重要工程以前，巴黎的地下沟道时常会突然塌陷。
Before the important works, undertaken in 1833, the subterranean drain of Paris was subject to these sudden slides.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
基于此解析式，讨论了分布栅电阻和内部沟道电阻对噪声性能的影响。
Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.
利用电荷泵方法可以有效而准确地测量出注入电荷沿沟道方向的分布。
The lateral distribution of injected charges can be measured precisely using the charge pumping method.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
压溶作用机理的基本模式为水薄膜模式、岛状沟道构造模式、格莱茨模式。
The mechanisms of pressure solution can be classified as water membrane model, island channeling model and Gratz model.
依据导电沟道内的电势分布，分析沟道宽度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing channel width on the operation characteristic of OSIT is analyzed.
本文通过对该类轴承沟道最小余量的理论分析，给出厂沟道余量的确定方法。
In the Paper, through theoretical analysis of minimum allowance of that type bearing raceway, the determining method of raceway allowance is given.
高能粒子在碳纳米管绳里的沟道效应，显示大的沟道直径和微弱的退沟道因子。
Channeling of high energy particle in the nanotubes-rope shows a large diameter of the channels and weak de-channeling factors.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
等高沟克服了这个问题，因为这些沟垂直于主坡方向布置，沟道坡度约为0.5%。
Contour furrows overcome this problem because they are placed on a gradient of about 0.5 % across the main slope.
沟道及沙棘柔性坝的土壤有机质含量在纵向大致呈现由上游到下游缓慢递增的过程。
Soil organic matter content increases gradually from upstream to downstream in the gully with seabuckthorn flexible dams and in the dam body.
他可以解释这样的事实：10伏特已经足够开通金属氧化物场效应晶体管的导电沟道。
It can be explained by the fact, that 10v is still high enough to fully open the MOSFETs channel.
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