而过多杂质的掺入会导致氧化锌薄膜晶体质量下降，这可能是氨气流量更大时电阻率再一次增大的原因。
Moreover, high density impurities might be formed in the ZnO lattice as NH_3 flow rate increased further, which could induce degradation of crystal quality causing the increase in the resistivity.
而当氨气流量增加，光激发荧光的线宽会减小，这是因为在高氨气流量下，纳米硅颗粒的均匀度会提升。
The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition.
而当氨气流量增加，光激发荧光的线宽会减小，这是因为在高氨气流量下，纳米硅颗粒的均匀度会提升。
The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition.
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