化合物中氧空位的形成有利于阴极的电子发射,氧缺位增强了镧氧化合物的半导体性。
The formation of oxygen vacancies enhances semiconductor property of La-O compound and improves greatly the performance of cathodes.
化合物中氧空位的形成有利于阴极的电子发射,氧缺位增强了镧氧化合物的半导体性。
The formation of oxygen vacancies enhances semiconductor property of La-O compound and improves greatly the performance of cathodes.
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