一种制造金属氧化物半导体的方法(500)。
A method of manufacturing a metal oxide semiconductor (500).
研究了一种氧化物半导体型氧敏元件的氧敏特性。
The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
研究了一种氧化物半导体型氧敏元件的氧敏特性。
The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.
氧化物半导体陶瓷材料是新型的中、高温热电材料。
Oxide semiconductor ceramics are new thermoelectric materials used at mid_or high_temperature for potential application in power generation from waste heat.
主要讨论NTC多晶氧化物半导体中晶界对电导的影响。
The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
纳米氧化锌颗粒是重要的氧化物半导体材料，具有广泛的应用范围。
ZnO nanoparticle is an important oxide semiconductor material, which is of potential applications in many areas.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
对钙钛矿结构氧化物半导体陶瓷中的电子导电机制，也作了进一步的阐明。
The electron conduction mechanism of semiconducting ceramic oxide with perovskite structure was also explained further.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
或者，本发明的另一个目的在于提供一种使用该氧化物半导体的半导体装置。
Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor.
文摘：描述了近十年来用作NO2气体传感器的酞菁类和氧化物半导体敏感材料。
Abstract: Phthalocyanine and oxide semiconductor sensitive materials used for NO2 sensors in recent ten year are described.
柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域。
The research and development of TCO films (including ITO films and AZO) prepared on flexible substrate will expand more applications.
电子装置具有包含氧化物半导体材料的半导体层，和设置在上述半导体层上的电极。
The electronic device is provided with a semiconductor layer composed of an oxide semiconductor material and an electrode arranged on the semiconductor layer.
因此，对氧化物半导体层（905）引入比氧化物半导体层（906）更高浓度的氢。
Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
本发明属于氧化物半导体薄膜材料领域，特别涉及氧化锌与二氧化钛复合薄膜材料及其制备方法。
The invention belongs to the field of oxide semiconductor film materials, and in particular relates to a zinc oxide and titanium dioxide composite film material and a preparation method thereof.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明的目的之一在于使用氧化物半导体层提供具备其电特性及可靠性优异的薄膜晶体管的半导体装置。
A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability is provided in the present invention.
采用溶胶 凝胶金属氧化物半导体薄膜 ，作为表面等离子体激元共振效应的光化学传感器的传感介质。
Optical properties of surface plasmons induced by the plan of a periodically arranged dielectric spheres on the metal slab;
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
基于以上原因，本论文的工作将主要建立在使用化学气相沉积法制备氮化物和氧化物半导体纳米材料的基础上。
The main contents of my graduate thesis, focusing on the synthesis of oxide and nitride semiconductor nanostructures through CVD, are summarized as:1.
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