型半导体氧化锌薄膜，其制备方法，和使用透明基片的脉冲激光沉积方法。
P-type semiconductor zinc oxide films, process for preparation thereof, and pulsed laser deposition method using transparent substrates.
用椭圆型喷淋吸收塔，氧化剂、碱吸收治理半导体工业废气中砷、磷、硫、氟、氯、氮氧化物及各种酸。
A dual absorbing tower shower containing oxidant and alkaline absorbant was used for removing arsine, phosphorus, sulfur, fluorine, chlorine and oxynitrides.
型压敏电阻器是以氧化锌为主要原料制造的半导体陶瓷元件，其电阻值随施加电压的变化而呈非线性变化。
Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxides. They have non-linear resistance that changes as a function of applied voltage.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
MYGJ高能型压敏电阻器是以氧化锌为主要原料的半导体陶瓷元件，其电阻值随施加电压的变化而变化。
Type MYGJ varistors are made of semiconductor ceramic material composed mainly of zinc oxides. They have non-linear resistance that changes as a function of applied voltage.
MYGJ高能型压敏电阻器是以氧化锌为主要原料的半导体陶瓷元件，其电阻值随施加电压的变化而变化。
Type MYGJ varistors are made of semiconductor ceramic material composed mainly of zinc oxides. They have non-linear resistance that changes as a function of applied voltage.
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