利用测量得到的栅电阻，计算结果的精度可以进一步提高。
Provided that the value of gate resistance is acquired from measurement, the precision of the solution can be improved further.
基于此解析式，讨论了分布栅电阻和内部沟道电阻对噪声性能的影响。
Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。
A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.
通过直流栅电压的作用室温时产生负电阻效应。
The applied gate voltage gives rise to negative differential resistance (NDR).
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
在数据处理中，考虑了部份沟道电阻贡献与栅电流有关。
In the data processing, it is considered that the contribution of the partial channel resistance is related to the gate cur-rent.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
采用P型栅压自举开关补偿技术，可以有效地克服采样管导通电阻变化引入的非线性失真，提高采样精度。
By compensating with P-type bootstrapped switch, this circuit can overcome nonlinear distortion, which is generally introduced by signal-dependent on-resistance, and improve sampling resolution.
因此介绍了一种采用自偏置低压共源共栅电流源的带隙基准电路结构，用两个电阻代替了偏置电路。
This paper introduces a low supply voltage band -gap reference circuit which used a self-bias cascode current mirror.
板栅和极柱连接件的电阻是电池欧姆内阻的主要成分。
The resistances of grids and connecting parts are the main components of the internal resistance.
板栅和极柱连接件的电阻是电池欧姆内阻的主要成分。
The resistances of grids and connecting parts are the main components of the internal resistance.
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