但不足之处是发射电流密度太小和有较大的栅极电流。
But it provides too small emission current density and gives a large gate current.
模拟得出栅极电流与实验结果符合，而得出的优化氮含量有待实验证实。
The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
通过减小栅极电路的电阻，栅极电流达到5毫安越早，和SCR之前在AC周期闪光。
By reducing the resistance of gate-circuit, the gate current reaches 5 mA sooner, and the SCR fires earlier in the ac cycle.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
如果栅极电阻更是降低了，门极电流的5毫安将会更早的周期内达到和SCR将提早火。
If the gate resistance is reduced even more, the 5ma of gate current will be reached even sooner during the cycle and the SCR will fire earlier.
当施加到阳极的交流电压上升，在正方向上，电流流经可控硅的栅极-阴极部分。
When the AC voltage applied to the anode rises in the positive direction, current flows through the gate-cathode section of the SCR.
由于以分 立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.
本发明涉及一种场发射装置及其制造方法，用于解决现有技术中场发射装置的栅极截获电流较高的问题。
The present invention is field emitting device and its manufacture process, and aims at solving the problem of great grid intercepted current in field emitting device technology.
输出功率和漏电流增加的栅极电压的增加。
The output power and drain current increase as the gate voltage increases.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
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