本文首先在标量场论的情形下，用最速下降法对有效势的泛函形式作了简要的评论。
The functional formalism for the effective potential is briefly reviewed for the case of a scalar field theory by using the method of steepest descents.
采用梯形势垒模型计算伏安特性，并与实验伏安特性拟合，得到了结的有效势垒参数。
Effective barrier parameters were obtained by fitting the theoretical curves based on the trapezoidal barrier potential model to the experimental ones.
结果表明，与界面光滑的结比较，界面粗糙的结的有效势垒宽度较窄，有效势垒面积较小。
The results showed that the effective barrier width and area of the junction with the rough interfaces were smaller than those of the junction with the smooth interfaces.
研究了场发射的有效势垒随外加电场的变化，发现在有效势垒随外电场变化的曲线中存在一段平台。
The effective barrier changes with increasing applied voltage, and there is a step in the current of barrier vs voltage.
为了处理纳米mos场效应管的量子效应，在蒙特卡罗模拟中引入有效势量子修正，并提出了基于PC机群的三维并行模拟算法。
The effective potential correction was used in 3d Monte Carlo simulation of nanoscale MOSFETs to deal with quantum mechanical effects. A parallel algorithm based on PC clusters was proposed.
为了处理纳米mos场效应管的量子效应，在蒙特卡罗模拟中引入有效势量子修正，并提出了基于PC机群的三维并行模拟算法。
The effective potential correction was used in 3d Monte Carlo simulation of nanoscale MOSFETs to deal with quantum mechanical effects. A parallel algorithm based on PC clusters was proposed.
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