有两种面积缺陷,即孪生和晶粒间界。
有两种面积缺陷,即孪生和晶粒间界。
杂质常常在晶粒间界偏析。
其中,第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。
The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.
因此,可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered to be similar to...
因此,可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered to be simi…
因此,可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be considered tob...
因此,可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be con...
因此,可以认为多晶纯铜在较高温度下的滞弹性蠕变机构与晶粒间界自扩散机构相似。
The mechanism of anelastic creep of polycrystalline copper at higher temperatures may thus be con...
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