晶体生长是一个复杂的相变过程。
报道了可重复性的晶体生长条件。
Conditions for the reproducible growth of crystals are reported.
因此宜选择无水乙醇为晶体生长介质。
讨论了晶体生长缺陷和溶液的稳定性。
The growth defects in the crystals and solution stability were also discussed.
在此报告了它的分离纯化和晶体生长。
It was reported here the purification and crystallization of Protein Disulfide Isomerase.
并且在这样的小滴中，晶体生长的很快。
水热条件下制备超细微晶是一个晶体生长的过程。
Preparation of ultrafine ZnO crystallites under hydrothermal conditions is a process of crystal growth.
通过临界生长速率解释了一系列晶体生长的实验结果。
The critical growth rate was calculated and applied to explain the experimental results of crystal growth.
他知道自己将会代表一个生物科技公司进行蛋白质晶体生长的试验。
He notes that he'll be conducting research on protein crystal growth on behalf of a biotech firm.
晶体生长速率取决于过冷度、温度梯度和初始粉末颗粒尺寸。
The growth velocity of the crystal depends on the undercooling, temperature gradient and original particles in the precursor.
浓度边界层是晶体生长过程中分析界面输运现象的重要元素。
Concentration boundary layer is an important subject in discussion of interfacial transfer phenomena in crystal growth.
关于晶面结构各向异性对晶体生长影响的研究已有新的内容；
There are some new discoveries on the crystal growth mechanism based on the AFM study so far.
本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。
Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.
采用变形有限元法对坩埚下降法晶体生长过程进行了瞬态数值模拟。
Transient numerical simulation for Bridgman method was carried out by means of deforming finite element method .
光学实时观察法晶体生长技术是研究高温熔体运动的有效手段之一。
High temperature in situ observation method was very useful to study the motion of melt.
根据晶体生长理论，讨论了磁场影响纳米颗粒形核和长大过程的机理。
The mechanism of magnetic field effect on the nano particle nucleation and growth was discussed by crystal growth theory.
研究了四钼酸铵（AQM ）晶体生长速率、反应历程和控制性步骤。
The rate of crystal growth, reaction mechanism and control step of AQM were studied.
自动直径控制(adc)技术是直拉法晶体生长设备的一项关键技术。
Automatic diameter control (ADC) is a key technique for the CZ crystal growth equipment.
晶体生长形成结晶金属原子最后到达点阵中的固定位置，晶体逐渐长大。
Crystal growth metal atoms to form the crystallization of the dot matrix fixed position, and crystals grew older.
固液界面处温度的精密测量是晶体生长动力学研究的一个重要实验数据。
In studying the kinetics of crystal growth from the melt, it is extremely important to measure the crystallization front temperature.
缓凝剂在二水石膏晶胚表面的吸附，使其晶体生长受阻，成为水化的控制过程。
The adsorption of retarders on the surface of nuclei newly produced inhibits the crystal growth of dihydrate and accordingly controls the hydration process of gypsum.
对不同烷基链长度及浓度对影响晶体生长的条件作了探讨，得到了最优化方案。
The influence of the length and concentration of alkyl chain on crystal growth is discussed and the optimum scheme is obtained.
这些缺陷在晶体生长时出现，有这类缺陷的晶体不能用于集成电路制造，应报废。
These defects appear during crystal growth, but crystals having such defects are not considered usable for ic manufacture and are discarded .
利用接种生长方法研究了TATMP对过饱和溶液中碳酸钙晶体生长速度的影响。
The effect of TATMP on the growth rate of calcite crystals in supersaturated solutions is studied with seeded growth technique.
本文以蔗糖过饱和溶液为研究对象，研究了声场对糖液结晶，尤其是对晶体生长的影响。
In this paper, it is discussed that sonic field influences the crystallization of the sugar solution, especially on the crystal growth.
模型计算与实验数据比较表明，湍流传质模型对扩散传质控制的晶体生长过程是可靠的。
The comparison of the calculated values for the model with the experimental data indicated that this model is reliable for diffusion controlled crystal growth.
以往的研究对碳酸钙结晶表明：晶体生长抑制效果随着每个分子上吸附基团的数目而增加。
Previous studies on calcium carbonate crystallization have shown that growth inhibition increases with the number of absorbing groups per molecule.
单晶硅晶体生长炉具有非线性和大纯滞后的特点，应用常规pid控制难以实现有效控制。
It is difficult to apply general PID control to the equipment of monocrystalline silicon growth with the nonlinear and great pure hysteresis characteristics.
单晶硅晶体生长炉具有非线性和大纯滞后的特点，应用常规pid控制难以实现有效控制。
It is difficult to apply general PID control to the equipment of monocrystalline silicon growth with the nonlinear and great pure hysteresis characteristics.
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