晶体厚度，空气膜层厚度，棱镜结构角共同影响棱镜偏光镜的透射比。
Transmission of polarizing prism is affected by crystal thickness, air inter layer thickness and configuration Angle.
晶体厚度和折射率的变化导致衰减全反射(atr)谱的同步角发生移动，进而引起反射率的变化。
The variations of crystal thickness and refractive index will lead to a shift of synchronous Angle of Attenuated Total Reflection (ATR) spectrum, and then bring reflectance variation.
衍射效率对入射角、晶体厚度以及外加电场的变化敏感，其中任一个参数的较小改变都可以引起衍射效率的较大变化。
Diffraction efficiency is sensitive to incident angles, crystal thickness and applied electric field. A small change of these factors may bring a great difference of the diffraction efficiency.
应用dgh- 4000型眼部A型超声测量仪检测了72例近视眼及18例正常对照眼的前房深度、晶体厚度及眼轴长度。
The DGH-4000 Ultrasonic Pachymeter was used in the measurement of the anterior chamber depth (AD), lens thickness (lt) and axial length (al) in 72 patients with myopia and 18 individuals.
换言之，当这些阵列具有传统晶体硅太阳能电池(crystallinesolar cell)的厚度时，它们的体积相当于两微米厚的薄膜的体积。
In other words, while these arrays have the thickness of a conventional crystalline solar cell, their volume is equivalent to that of a two-micron-thick film.
结果表明：组成一维二元光子晶体的折射率、厚度、层数、入射角、光源的偏振态等都对透射特性有影响。
The results show that the factors are the refractive index thick ness layer number of one-dimensional dual photonic crystal polarization and incident Angle of incident ray.
通过控制温度和湿度，用垂直沉积法快速制备出了不同厚度的高质量二氧化硅和聚苯乙烯胶体晶体薄膜。
Polystyrene and silica colloidal crystal multilayers with controlled thickness are fabricated quickly by the vertical deposition method at certain temperature and humidity.
在适当的条件下，此电源可以满足各种厚度非线性晶体材料的极化要求。
Under appropriate experimental conditions this power supply can meet the needs of polarizing nonlinear crystals with various thicknesses by electrical polarization method.
实验中采用晶体谱仪时间积分和X射线条纹相机同时获取碳氢平面靶强激光烧穿厚度和烧穿时间。
The ablation thickness and time were synchronously measured with time integrated X ray crystal spectrometers and a X ray streak camera.
平板光子晶体存在一个最佳厚度，使其导模带隙最大。
A photonic crystal slab has an optimal thickness, which makes the photonic band gap maximum.
通过理论计算得到了KDP晶体在不同晶向上临界切削厚度的变化规律。
The variation rules of critical cutting thickness on the different crystal and different orientation of KDP crystal are obtained by theoretic calculate.
第二，光学宽带监测系统与石英晶体传感器相结合，实现混合工艺控制技术，提高薄膜厚度的精度控制。
Second, optical broadband monitoring is combined with additional quartz crystal sensors to realize a hybrid process control for improving layer thickness accuracy.
结果表明：组成一维二元光子晶体的折射率、厚度、层数、入射角、光源的偏振态等都对透射特性有影响。
The results show that the factors are the refractive index, thick ness, layer number of one-dimensional dual photonic crystal, polarization and incident Angle of incident ray.
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
通过数值计算和计算机模拟，确定了光子晶体结构的特征间隔光学厚度。
The photonic crystal's characteristic septal optical thickness is determined by calculation and simulation.
通过建立KDP晶体脆塑转变临界切削厚度模型，研究了KDP晶体金刚石切削脆塑转变机理。
Through establishing a model of critical cutting depth during the occurrence of brittle-ductile transition of KDP crystal, the mechanism of brittle-ductile transition of KDP crystal is studied.
在许多情况下，需要确定晶体光轴方向厚度这一重要的物理参数，为此就需要精确测量出晶体的厚度。
In many instances the thickness of the optical axis direction of crystal as a important physical parameter needs to be confirmed, so it is necessary to accurately measure the crystal thickness.
但是厚度继续增加，薄膜晶体结构反而恶化，电阻率升高。
However, the thickness continued to increase, but the deterioration of the structure of film grain, lower resistivity.
结果显示金刚石膜的硬度不仅与晶体生长方向和晶粒大小有关，还与厚度有关。
The result shows that hardness of diamond film is related to not only crystal growth direction but also thickness.
文章分析了传感器Q值与光子晶体周期数及被探测液体厚度之间的关系。
It was analyzed how the photonic crystal periodicity and liquid thickness affect the Q value of the sensor.
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
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