由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
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