本文还提出了液相掺氮碳膜生长的化学机制。
And, schemes of the film growth in the liquid phase were suggested.
此外，掺氮对直拉硅氧沉淀熟化的影响还有待揭示。
Moreover, the effect of nitrogen-doping on the Ostwald ripening of oxygen precipitates is yet to be revealed.
对所制备的掺氮非晶碳薄膜用光电子能谱和红外光谱进行了表征。
The nitrogen containing films are also studied by using XPS spectra and IR spectra.
掺氮样品均具有好的紫外光吸收，且吸收边均红移至可见光区；
The UV-visible response and higher absorption in the visible light region can be observed.
研究了不同RTP条件对快中子辐照掺氮硅中体缺陷和清洁区的影响。
The effect of RTP conditions on bulk stacking faults (BSFs) and denuded zone (DZ) was investigated.
将快速热处理（RTP）引入到快中子辐照掺氮直拉硅的内吸杂工艺中。
Rapid thermal process (RTP) was used in the intrinsic gettering (IG) process of fast neutron irradiated CZSi.
本发明涉及阀金属粉末的掺氮方法，以及通过该方法获得的含氮钽粉和含氮铌粉。
The invention relates to a nitrating method of a valve metal powder, and a nitrogenous tantalum powder and a nitrogenous niobium powder which are obtained by the nitrating method.
本发明的方法能够确保粒子间掺氮均匀，且工艺简单，所需设备简单，加工成本低。
The method of the invention can ensure equal nitration between particles with simple technology, simple necessary equipments and low processing cost.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
和以往掺氮方法相比，由于本发明金属粉末中粒子含氮量均匀，因而漏电流低，损耗低。
Since the particle nitrogen content of the metal powder of the invention is equal, the leakage current and losses are low compared with previous nitrating method.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
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