本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
本项目主要针对影响器件开关速率和高效性能的反向恢复电荷、栅电荷进行优化和改进。
Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.
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