而且，发现在样品中的深辐射能级的荧光效率也受到快速热退火的影响。
Furthermore, we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.
本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
研究了快速成膜技术中热分解温度对薄膜结晶取向的影响，分析了在相同退火条件下，分别采用不同热分解温度制备得到的薄膜的结晶状况。
To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition.
研究了快速成膜技术中热分解温度对薄膜结晶取向的影响，分析了在相同退火条件下，分别采用不同热分解温度制备得到的薄膜的结晶状况。
To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition.
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