快恢复二极管需要在化学镀镍前扩铂。
Platinum doping is need before nickel chemical plating for FR rectifiers.
探讨了快恢复二极管制造过程中，选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.
测试结果表明，此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性，在国际上处于领先水平。
The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
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